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| BBY 51 Silicon Tuning Diode * High Q hyperabrupt dual tuning diode * Designed for low tuning voltage operation * For VCO's in mobile communications equipment Type BBY 51 Marking Ordering Code S3 Q62702-B631 Pin Configuration 1=A 2=A Package 3 = C1/C2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Jan-09-1997 BBY 51 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 C VR = 6 V, TA = 65 C AC Characteristics Diode capacitance CT 4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.12 2 6.1 5.2 4.6 3.7 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.55 2.2 pF 1.4 2.2 0.7 pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jan-09-1997 BBY 51 Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group 3 Jan-09-1997 |
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